Navitas Semiconductor Corporation has partnered with NVIDIA to provide its GaN and SiC technologies for NVIDIA’s next-generation 800 V HVDC data center power architecture. This collaboration aims to enhance power delivery for AI workloads by directly converting high-voltage AC grid power into efficient 800 V DC. Utilizing solid-state transformers, the design supports 1 MW IT racks while reducing copper wire size and overall infrastructure complexity. Navitas’ innovations include GaNSafe power ICs and GeneSiC devices, delivering high efficiencies and reliability critical for modern data centers, thereby improving maintenance and cooling costs significantly.
Navitas Semiconductor Corporation
Navitas’ GaN and SiC technologies have been chosen to power Nvidia’s 800 V HVDC data center setup, facilitating 1 MW IT racks and more.
NVIDIA Collaborates with Navitas for Advanced 800 V HVDC Framework
Navitas’ GaN and SiC technologies have been selected to support Nvidia’s 800 V HVDC data center power infrastructure to support 1 MW IT racks and beyond.
TORRANCE, Calif., May 21, 2025 (GLOBE NEWSWIRE) — Navitas Semiconductor (Nasdaq: NVTS), the leader in next-gen GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, announced a partnership with NVIDIA (Nasdaq: NVDA) on their forthcoming 800 V HVDC architecture aimed at supporting ‘Kyber’ rack-scale systems powering GPUs like the Rubin Ultra, leveraging GaNFast™ and GeneSiC™ power technologies.
NVIDIA’s 800V DC architecture is designed to deliver efficient, scalable power for advanced AI tasks, enhancing reliability, efficiency, and reducing complexity in infrastructure.
Current data center structures rely on conventional 54 V rack power distribution, limited to certain kilowatt capacities. Significant copper busbars are necessary to transfer this lower voltage electricity from power racks to computing trays. When power exceeds 200 kW, this setup encounters physical limitations due to power density, copper requirements, and diminished system efficiency.
Modern AI data centers may need gigawatts (GW) of power to accommodate rising AI computational demands. Nvidia’s solution is to directly convert 13.8 kV AC grid power to 800 V HVDC right at the data center perimeter using solid state transformers (SST) and industrial rectifiers, thereby eliminating several AC/DC and DC/DC conversion stages, optimizing efficiency and reliability.
With the elevated voltage of 800 V HVDC, copper wire thickness can be reduced by up to 45% due to I2R losses, allowing for the same power delivery with increased voltage and reduced current. In a traditional 54V DC setup, more than 200 kg of copper would be necessary for a 1MW rack, which is not feasible for future AI data centers demanding GW levels of power.
The 800V HVDC directly powers IT racks (removing the need for additional AC-DC converters) and is converted to lower voltages through DC-DC converters for GPU operation, such as for the Rubin Ultra.
Navitas stands as a frontrunner in AI data center solutions harnessed through GaN and SiC technology. Their high-power GaNSafe™ ICs merge control, drive, sensing, and critical protection features, ensuring unparalleled reliability and strength. GaNSafe is touted as the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, removal of negative gate drive, and programmable slew rate control, all activated by 4 pins, enabling treatment of the package as a discrete GaN FET without requiring a VCC pin.
Additionally, Navitas presents a lineup of medium voltage (80-120V) GaN devices, specifically designed for secondary side DC-DC conversion, providing high-speed, high efficiency, and compact solutions for AI data center PSUs with outputs of 48V-54V.
Backed by 20 years of SiC innovation, GeneSiC’s proprietary ‘trench-assisted planar’ technology delivers exceptional performance across varying temperatures, resulting in high-speed, cool operation for robust, high-power applications. G3F SiC MOSFETs provide exceptional efficiency with high-speed performance, achieving lower case temperatures by up to 25°C and extending lifespan by up to 3 times compared to other SiC counterparts.
With the most extensive voltage range in the industry—ranging from 650 V to ultra-high voltages of 2.3 kV to 6.5 kV—this SiC technology has been utilized in various projects for megawatt energy storage and grid-tied inverters with the Department of Energy (DoE).
Navitas GaN and SiC technologies cover the complete power delivery from grid to the GPU.
Fig. 1. Navitas GaN and SiC technologies cover the complete power delivery from grid to the GPU.
In August 2023, Navitas unveiled a high-speed, high-efficiency 3.2 kW CRPS, boasting a 40% smaller footprint compared to the leading silicon alternatives for demanding AI and Edge computing. This was succeeded by the world’s highest power density 4.5 kW CRPS, achieving a remarkable 137 W/in3, and an efficiency level exceeding 97%. In November 2024, Navitas launched the world’s first 8.5 kW AI data center power supply, powered by GaN and SiC, achieving 98% efficiency while adhering to the Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications. Moreover, Navitas introduced IntelliWeave, a patented digital control technique, which when combined with high-power GaNSafe and Gen 3-Fast SiC MOSFETs, allows for PFC peak efficiencies of 99.3% and reduces power losses by 30% compared to current solutions. Their latest 12 kW PSU was also showcased at the Navitas ‘AI Tech Night’ during the Computex exhibition in Taiwan on May 21st.
“We are thrilled to be chosen by NVIDIA for collaborative efforts on their 800 V HVDC architecture initiative. Our latest advancements in high-power GaN and SiC technologies have led to industry firsts, influencing markets such as AI data centers and electric vehicles,” stated Gene Sheridan, CEO and co-founder of Navitas. “With our extensive product portfolio, we can effectively support NVIDIA’s 800V HVDC framework, from grid to GPU. We are grateful that NVIDIA acknowledges our technology and commitment to pioneering the forthcoming generation of data center power delivery.”
NVIDIA’s 800V HVDC architecture is set to enhance overall power efficiency by 5%, cut maintenance expenses by 70% (owing to reduced PSU failures), and decrease cooling costs through direct HVDC connections to IT and compute racks. To access NVIDIA’s technical blog, click here. For more details on Navitas’ AI roadmap, visit here or contact us at [email protected].
About Navitas Navitas Semiconductor (Nasdaq: NVTS) is the sole pure-play, next-gen power-semiconductor enterprise that’s been innovating for the past 10 years since its inception in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power with drive capabilities, control, sensing, and protection for rapid charging, higher power density, and energy savings. Complementary GeneSiC™ devices represent high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Target markets include AI data centers, EV, solar, energy storage, industrial/home appliances, mobile, and consumer tech. Navitas boasts over 300 patents issued or in application, alongside the industry’s only 20-year GaNFast warranty. Notably, Navitas was the first semiconductor entity to achieve CarbonNeutral® certification.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks may be trademarks or registered trademarks identifying products or services of their respective owners.
Contact Information Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing [email protected]
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