Micron has announced the first G9-based UFS 4.1 and UFS 3.1 storage solutions for smartphones, enhancing on-device AI capabilities. These new chips, available in capacities of 256GB to 1TB, will debut alongside Micron’s 1y LPDDR5X chips in early 2026. The UFS 4.1 and 3.1 chips offer improved power efficiency and faster read/write speeds, suitable for ultra-thin and foldable devices. Notable software enhancements include Zoned UFS for better read-write efficiency, Data defragmentation that improves performance by 60%, and the Pinned WriteBooster for quicker data access, with intelligent latency tracking also available for both UFS versions.
Today, Micron revealed the world’s first G9-based UFS 4.1 and UFS 3.1 storage solutions for smartphones, enhancing on-device AI capabilities. The new storage chips are expected to be incorporated into flagship devices soon after Micron’s 1y LPDDR5X chips, which are set to launch in early 2026.
The UFS 4.1 and UFS 3.1 mobile storage solutions utilize Micron’s G9 process node, providing enhanced power efficiency and improved read/write speeds. Available capacities range from 256GB up to 1TB, making them ideal for ultra-thin and foldable smartphones.
In addition to hardware enhancements, Micron is introducing software updates that are designed to elevate user experience and optimize performance for various AI operations. For example, the UFS 4.1 solutions include Zoned UFS support, which enhances read-write efficiency and minimizes write amplification, while data defragmentation optimizes data relocation within the UFS device by 60%. Pinned WriteBooster allows for quicker access to data stored in the WriteBooster buffer, offering speed improvements of up to 30%. Additionally, the Intelligent Latency Tracker provides automated debugging by analyzing latency logs. This last feature is also included with UFS 3.1, while the other advancements appear to be exclusive to the UFS 4.1 chips.